First-Principles Insights into Surface and Ligand Effects in Stoichiometric HgTe Quantum Dots

Abstract

HgTe quantum dots are promising mid-infrared nanomaterials owing to their exceptional bandgap tunability, yet their electronic structure is strongly influenced by surface coordination and ligand passivation at ultrasmall sizes. Here, we employ atomistic simulations to systematically investigate stoichiometric HgTe nanoclusters with sizes 0.86 to 1.85 nm. The in silico exploration uncovers a transition from confinement-dominated electronic structures with delocalized frontier states in small self-passivated clusters to surface influenced characteristics in larger nanoclusters. Increased coordination and bond-length inhomogeneity in the larger nanoclusters generate localized near-gap states centered on undercoordinated surface atoms. At intermediate sizes, the band edge states become spatially separated on different regions of the cluster without forming deep gap states, marking the onset of surface induced electronic asymmetry. In larger clusters (1.8 nm), common neutral ligands like amines, thiols, phosphines, and alcohols effectively eliminate surface-derived localized states by restoring local coordination and altering the band edge electronic structure through ligand surface hybridization. The sensitivity of the bandgap to ligand identity and binding site underscores the interplay between surface coordination and ligand chemistry in shaping the electronic structure of these nanoclusters. These insights provide an atomistic understanding of size-dependent electronic structures in ultrasmall HgTe clusters. The study further establishes neutral ligands as powerful chemical handles for engineering frontier electronic states relevant to infrared optoelectronic functionality.