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arXiv · 2606.08045

40% boost in extreme ultraviolet conversion efficiency via simultaneous dual-beam 2-{\mu}m laser irradiation

Naoki Nagahama·Kaito Nishimiya·Shunya Yamamoto·Hayato Yazawa·Yuta Takai·Chisato Tanaka·Kazuyuki Sakaue·Atsushi Sunahara·Gerry O'Sullivan·Shinichi Namba·Takeshi Higashiguchi·Eiji J. Takahashi
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Abstract

Scaling extreme ultraviolet (EUV) source power for next-generation lithography demands higher conversion efficiency (CE) at reduced per-pulse energies. We demonstrated a 40% CE enhancement by simultaneous dual-beam irradiation of a planar Sn target with a 2090-nm, 20-ns Ho:YAG laser. Single-beam irradiation at 40 mJ yielded an EUV CE of 2.6%; splitting the same total energy equally into two beams of 20 mJ each - at identical peak intensity - raised the EUV CE to 3.6%, which was the highest reported for 2-{\mu}m-driven laser-produced plasma sources. The EUV source size (60-70 {\mu}m) and energetic-ion spectra were nearly identical across both configurations, confirming comparable plasma conditions. Because the scheme requires only passive beam splitting and scales readily to three or more beams, it offers a practical route toward multi-kW-class, energy-efficient EUV sources for high-NA and hyper-NA lithography.

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Naoki Nagahama, Kaito Nishimiya, Shunya Yamamoto, Hayato Yazawa, Yuta Takai, Chisato Tanaka, Kazuyuki Sakaue, Atsushi Sunahara, Gerry O'Sullivan, Shinichi Namba, Takeshi Higashiguchi, Eiji J. Takahashi. 2026-06-06. 40% boost in extreme ultraviolet conversion efficiency via simultaneous dual-beam 2-{\mu}m laser irradiation. https://arxiv.org/abs/2606.08045

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