Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

E. Katsipoulaki; N. G. Chatzarakis; E. Rigoutsou; D. Katrisioti; T. Taniguchi; K. Watanabe; S. Psilodimitrakopoulos; N. T. Pelekanos; I. Paradisanos

arXiv · 2606.04675

Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers

E. Katsipoulaki·N. G. Chatzarakis·E. Rigoutsou·D. Katrisioti·T. Taniguchi·K. Watanabe·S. Psilodimitrakopoulos·N. T. Pelekanos·I. Paradisanos

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Abstract

Interlayer excitons in transition metal dichalcogenide (TMD) heterobilayers possess a permanent electric dipole moment and long recombination lifetimes, making them a promising platform for exploring excitonic many-body physics. Here, we report dipolar interlayer excitons in a MoS$_{1.4}$Se$_{0.6}$/MoSe$_2$ heterobilayer encapsulated in hexagonal boron nitride. Low-temperature photoluminescence measurements reveal a distinct emission peak at $\sim1.4$ eV, attributed to radiative recombination of interlayer excitons. The emission exhibits a blueshift with increasing excitation power, indicating repulsive dipole-dipole interactions. Time-resolved photoluminescence measurements uncover nanosecond-scale lifetimes, consistent with the spatial separation of electrons and holes across the two layers. These findings establish chalcogen-alloyed TMD heterobilayers as a versatile platform for engineering dipolar excitons and tuning excitonic interactions in van der Waals materials.

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E. Katsipoulaki, N. G. Chatzarakis, E. Rigoutsou, D. Katrisioti, T. Taniguchi, K. Watanabe, S. Psilodimitrakopoulos, N. T. Pelekanos, I. Paradisanos. 2026-06-03. Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers. https://arxiv.org/abs/2606.04675

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