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arXiv · 2606.02931

Second-Order Synaptic Memory using Inherent Plasticity of Moiré Superlattices

Tanweer Ahmed·Kenji Watanabe·Takashi Taniguchi·Fèlix Casanova·Luis E. Hueso
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Abstract

Achieving synaptic functionality electronically in a single-element quantum material is a fundamental challenge, as conventional methods rely on the introduction of extrinsic charge-traps or polar components. Here, we demonstrate that twisted double bilayer graphene (tDBLG) moiré superlattices, composed purely of carbon, exhibit electronic hysteresis and plasticity in presence of twist-angle disorder. Inversion symmetry breaking at the moiré length scales also gives rise to second-order nonlinear electrical response via disorder-mediated extrinsic mechanisms. Such second-order nonlinearity is highly tunable in both sign and magnitude by varying carrier concentration and vertical displacement field. We harness the coexistence of electronic plasticity and second-order nonlinearity to realize a second-order synaptic memory device. Our findings establish strained moiré carbon systems as a powerful new platform for energy-efficient neuromorphic computing, demonstrating that complex electronic functionality can emerge purely from symmetry breaking physics in a single-element material.

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Tanweer Ahmed, Kenji Watanabe, Takashi Taniguchi, Fèlix Casanova, Luis E. Hueso. 2026-06-01. Second-Order Synaptic Memory using Inherent Plasticity of Moiré Superlattices. https://doi.org/10.1002/adma.202509837

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