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arXiv · 2605.23627

C-band 160 Gbs-1 Zero-bias Graphene Photodetectors: Breaking the Responsivity-Bandwidth Trade-off by Heterostructure Engineering

Abstract

Graphene photodetectors offer ultrafast response and broadband operation, but their responsivity is typically limited by rapid hot-carrier cooling, leading to a trade-off between sensitivity and speed. Here, we demonstrate that modifying the dielectric environment provides an effective route to control hot-carrier cooling and enhance device performance. By employing a WSe2 encapsulation architecture, we suppress out-of-plane energy dissipation, leading to an increased cooling length (~2.68 um) and a reduced heat-exchange coefficient. As a result, we obtain zero-bias graphene photodetectors with responsivities up to ~0.12 A/W (potentially ~0.4 A/W) while maintaining ultrafast operation beyond the setup-limited 110 GHz bandwidth. The devices enable direct detection at data rates of 120 Gb s-1 (NRZ) and 160 Gb s-1 (PAM-4), with performance achieved using minimal digital signal processing. These results establish dielectric engineering as a key design axis for controlling hot-carrier dynamics, enabling energy-efficient, high-speed optical receivers for next-generation interconnects and AI-driven data systems.

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Karuppasamy Pandian Soundarapandian, Alberto Montanaro, Ioannis Vangelidis, Stefan M. Koepfli, Lorenzo Orsini, Matteo Ceccanti, Laurenz Kulmer, Misal Misal, Tom Reep, Sebastián Castilla, Kenji Watanabe, Takashi Taniguchi, Seth Ariel Tongay, Dries Van Thourhout, Juerg Leuthold, Klaas-Jan Tielrooij, Elefterios Lidorikis, Marco Romagnoli, Vito Sorianello, Frank H. L. Koppens. 2026-05-22. C-band 160 Gbs-1 Zero-bias Graphene Photodetectors: Breaking the Responsivity-Bandwidth Trade-off by Heterostructure Engineering. https://arxiv.org/abs/2605.23627

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