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arXiv · 2605.22577

A Non-Volatile Heterogeneous Quantum Dot III-V/Si DFB Laser with Optical Memristive Behavior

Stanley Cheung·Bassem Tossoun·Di Liang·Yuan Yuan·Yingtao Hu·Geza Kurczveil·Xucheng Yang·Raymond Beausoleil
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Abstract

In this work, we introduce a non-volatile heterogeneous quantum dot (QD) III-V/Al2O3/Si distributed feedback (DFB) laser exhibiting optical memristive behavior. The device operates in the O-band (~1300 nm) with a threshold current density of 234 A/cm2 and a side-mode suppression ratio exceeding 48 dB. Co-integrated Al2O3-based memristors produce bipolar resistive switching, yielding non-volatile wavelength shifts of ~ 46 pm and ~ 17 dB peak power contrast with zero static holding power. The III-V/Al2O3/Si heterojunction memristor I-V hysteresis is also modeled. This new device enables simultaneous coherent light generation and persistent optical state storage, establishing a new class of active photonic memory for neuromorphic and reconfigurable WDM applications.

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Stanley Cheung, Bassem Tossoun, Di Liang, Yuan Yuan, Yingtao Hu, Geza Kurczveil, Xucheng Yang, Raymond Beausoleil. 2026-05-21. A Non-Volatile Heterogeneous Quantum Dot III-V/Si DFB Laser with Optical Memristive Behavior. https://arxiv.org/abs/2605.22577

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