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arXiv · 2605.21297

Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching

Ling-Jie Zhou·Deyi Zhuo·Han Tay·Zi-Jie Yan·Pu Xiao·Xiaoda Liu·Bomin Zhang·Cui-Zu Chang
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Abstract

Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic ferromagnetism, provide a unique platform for realizing SOT switching of edge current chirality in quantum anomalous Hall (QAH) insulators. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI trilayers with controlled layer thicknesses on heat-treated SrTiO3(111) substrates. Electrical transport measurements reveal that SOT-driven magnetization reversal and the associated switching of edge current chirality are governed by the SrTiO3(111) substrate-induced charging effect, which generates an asymmetric chemical-potential alignment between the top and bottom magnetic TI layers. Furthermore, we demonstrate that the switching polarity and efficiency can be tuned through heterostructure design, gate voltage, and in-plane magnetic field, consistent with SOT symmetry. These findings identify chemical potential asymmetry as the origin of the large SOT switching ratio in magnetic TI trilayers and establish a route for electrical control of edge current chirality in QAH insulators. This work advances the understanding of SOT switching mechanism in magnetic topological materials and paves the way for next-generation, energy-efficient QAH-based logic and memory devices.

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Ling-Jie Zhou, Deyi Zhuo, Han Tay, Zi-Jie Yan, Pu Xiao, Xiaoda Liu, Bomin Zhang, Cui-Zu Chang. 2026-05-20. Designing Magnetic Topological Insulator Trilayers for Highly-Efficient Spin-Orbit Torque Switching. https://doi.org/10.1021/acs.nanolett.6c02154

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