Engineering the band structure of few-layer graphene by S-doping: from linear dispersion to impurity flat bands

Armin Sahinovic; Rossitza Pentcheva

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arXiv · 2605.12256

Engineering the band structure of few-layer graphene by S-doping: from linear dispersion to impurity flat bands

Armin Sahinovic·Rossitza Pentcheva

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Abstract

Motivated by the technological relevance of S-doped few-layer graphene (FLG) in battery applications and in the oxygen reduction reaction, we systematically explore the effect of basal plane S-doping on the electronic properties of mono-, bi-, and four-layer graphene, using first-principles calculations with van der Waals corrections. In the monolayer we find a variety of effects ranging from a sustained Dirac cone with localized impurity bands away from the Fermi level for thiophenic doping (2V1S) to a band gap opening of 0.4 eV and impurity flat bands close to the Fermi-level for graphitic doping (1V1S) and an additional $n$-type doping together with spin-polarization for thiopyranic doping (4V3S). Incorporation in FLG leads to modification of the Dirac cone into a set of hyperbolic touching bands in 2V1S; reduction (bilayer) and closing of the band gap with additional hyperbolic touching bands in conjunction with an impurity flat band at the Fermi level in 1V1S and 4V3S and a reduction of spin polarization in the latter. Overall, S-doping enables design of the band structure and tuning the electronic behavior of FLG from metallic to insulating and from linear dispersion to impurity flat bands that makes S-doped FLG a promising material for versatile technological applications.

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Armin Sahinovic, Rossitza Pentcheva. 2026-08-28. Engineering the band structure of few-layer graphene by S-doping: from linear dispersion to impurity flat bands. https://arxiv.org/abs/2605.12256

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