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arXiv · 2605.09532

Single-atom trapping in the evanescent field of an integrated photonic resonator

Abstract

Strong atom-photon interactions on scalable photonic platforms hold significant potential for both atomic and photonic quantum information platforms. In particular, trapping of a single atom on a planar photonic integrated resonator at the subwavelength distances required for strong coupling to the guided modes has remained an outstanding challenge. Here we demonstrate efficient trapping of a single ultracold rubidium atom within the evanescent field of an integrated silicon-nitride microring resonator, at distances of 150-200 nm from the chip surface. Efficient, single-stroke loading process is achieved using an evanescent-field mechanism related to Sisyphus cooling, in which a single scattering event dissipates the atom's kinetic energy and transfers it into a near-surface trap. We observe logarithmic scaling of trapping durations spanning from sub-millisecond timescales up to 1 second, without continuous cooling. The trapped atom couples efficiently to the resonator, enabling on-chip photon collection, photon antibunching, and Purcell-enhanced spontaneous emission with single-atom cooperativity exceeding unity. Our results establish the potential of CMOS-compatible chip-based atom-photon interfaces for scalable quantum photonic circuits.

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Yair Margalit, Omri Davidson, Oded Zemer, Yoad Michael, Orel Bechler, Dror Liran, Noam Gross, Doron Azoury, Jeremy Raskop, Yaakov Yudkin, Gabriel Guendelman, Moshe Katzman, Michael Nagli, Yair Antman, Nadav Kandel, Geva Arwas, Idit Peer, Ofer Firstenberg, Barak Dayan. 2026-05-10. Single-atom trapping in the evanescent field of an integrated photonic resonator. https://arxiv.org/abs/2605.09532

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