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arXiv · 2605.05571

Tunable Interlayer Charge-transfer States in MoSe$_2$/WS$_2$ Moir\'e Superlattices

Abstract

Moir\'e superlattices formed by transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform for studying strongly correlated electronic, excitonic, and topological phenomena in solids. In particular, angle-aligned MoSe$_2$/WS$_2$ heterobilayers, which have a Type-I band alignment at zero vertical electric field, host rich correlated spin and charge physics. Here, combining large-scale first-principles calculations and optical reflection spectroscopy, we report a thorough study of the emergent moir\'e excitonic states and interlayer charge-transfer states in angle-aligned electron-doped MoSe$_2$/WS$_2$ moir\'e superlattices. The moir\'e excitonic states serve as sensitive optical probes to the localization profile of doped electrons. We observe a series of interlayer charge-transfer transitions from n/n$_0$ = 1 to 4 (where n$_0$ denotes the moir\'e density) when the vertical electric field switches the heterostructure band alignment from Type-I to Type-II. By tuning the vertical electric field, we can precisely control the interlayer electron localization, realizing a Fermi-Hubbard model with a tunable charge-transfer band on an effective honeycomb lattice. Furthermore, Monte Carlo simulation of the doping dependence of the electric-field susceptibility predicts that multiple correlated charge-ordered states appear at both integer and fractional fillings. Our results provide a holistic understanding of the emergent optical excitations and the correlated charge-transfer states in electron-doped MoSe$_2$/WS$_2$ moir\'e superlattices.

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Zheyu Lu, Jiahui Nie, Tianle Wang, Rwik Dutta, Ruishi Qi, Jingxu Xie, Can Uzundal, Jianghan Xiao, Ziyu Wang, Yibo Feng, Kenji Watanabe, Takashi Taniguchi, James R. Chelikowsky, Archana Raja, Steven G. Louie, Mit H. Naik, Michael P. Zaletel, Feng Wang. 2026-05-07. Tunable Interlayer Charge-transfer States in MoSe$_2$/WS$_2$ Moir\'e Superlattices. https://arxiv.org/abs/2605.05571

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