Antiferromagnetic stripe phase and large-gap insulating ground state of the correlated $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) single atomic layer

Mohammadmehdi Torkzadeh; Mattia Iannetti; Mathieu Lizée; Amitayhush Thakur; Maris Hervé; Francois Debontridder; Pascal David; Michele Casula; Gianni Profeta; Tristan Cren; Matteo Calandra; Cesare Tresca; Christophe Brun

arXiv · 2603.26304

Antiferromagnetic stripe phase and large-gap insulating ground state of the correlated $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) single atomic layer

Mohammadmehdi Torkzadeh·Mattia Iannetti·Mathieu Lizée·Amitayhush Thakur·Maris Hervé·Francois Debontridder·Pascal David·Michele Casula·Gianni Profeta·Tristan Cren·Matteo Calandra·Cesare Tresca·Christophe Brun

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Abstract

The one-third monolayer Sn layer on Si(111) has long been considered a benchmark system for exploring two-dimensional Mott physics, owing to its narrow bandwidth and sizable on-site Coulomb repulsion. Previous experiments suggested the emergence of a low-temperature Mott insulating phase with an energy gap of only a few tens of meV, while theory predicted a possible antiferromagnetic ordering that remained experimentally elusive. Here, by combining low-temperature scanning tunneling microscopy/spectroscopy with first-principles calculations, we reveal that the $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) surface undergoes a transition below 30K into a robust insulating state characterized by a remarkably large gap of about 440 $\pm$ 120 meV at 4K, five to ten times larger than previously reported. Quasiparticle interference imaging uncovers a well-defined $2\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) superstructure, providing direct evidence for a two-dimensional stripe-like antiferromagnetic order. Ab initio calculations reveal that the silicon substrate stabilizes this phase through strong nonlocal tin-tin interactions, highlighting the decisive role of substrate-driven correlations in the $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) system.

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Mohammadmehdi Torkzadeh, Mattia Iannetti, Mathieu Lizée, Amitayhush Thakur, Maris Hervé, Francois Debontridder, Pascal David, Michele Casula, Gianni Profeta, Tristan Cren, Matteo Calandra, Cesare Tresca, Christophe Brun. 2026-03-27. Antiferromagnetic stripe phase and large-gap insulating ground state of the correlated $\sqrt{3}\times\sqrt{3}$~R30$^{\circ}$-Sn/Si(111) single atomic layer. https://arxiv.org/abs/2603.26304

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