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arXiv · 2602.21742

Room-temperature, continuous wave lasing in planar microcavities with quantum dots

Andrey Babichev·Mikhail Bobrov·Alexey Vasilev·Sergey Blokhin·Nikolay Maleev·Ivan Makhov·Natalia Kryzhanovskaya·Leonid Karachinsky·Innokenty Novikov·Anton Egorov
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Abstract

High-quality planar cavities with low-absorption mirrors based on $Al_{0.2}Ga_{0.8}As/Al_{0.9}Ga_{0.1}As$ layers demonstrate continuous wave lasing at a wavelength of 956 nm. At 300 K, the threshold power density and quality-factor at the threshold are (4.2$\pm$0.3) $kW/cm^2$ and (6800$\pm$220). Increasing the pump level above two thresholds lead to an enlargement in the quality-factor to at least 19000. Efficient lateral heat dissipation in the planar semiconductor microcavity is confirmed by a low mode-energy shift of approximately 400 $\mu$eV at two lasing thresholds.

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Andrey Babichev, Mikhail Bobrov, Alexey Vasilev, Sergey Blokhin, Nikolay Maleev, Ivan Makhov, Natalia Kryzhanovskaya, Leonid Karachinsky, Innokenty Novikov, Anton Egorov. 2026-02-25. Room-temperature, continuous wave lasing in planar microcavities with quantum dots. https://doi.org/10.1063/5.0331370

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