Non-Hermitian topological devices with Chern insulators

Kyrylo Ochkan; Michael Wissmann; Louis Veyrat; Lixuan Tai; Minoru Kawamura; Yoshinori Tokura; Viktor Könye; Bernd Büchner; Jeroen van den Brink; Ion Cosma Fulga; Joseph Dufouleur; Romain Giraud

doi:10.1016/j.newton.2026.100630

arXiv · 2512.21725

Non-Hermitian topological devices with Chern insulators

Kyrylo Ochkan·Michael Wissmann·Louis Veyrat·Lixuan Tai·Minoru Kawamura·Yoshinori Tokura·Viktor Könye·Bernd Büchner·Jeroen van den Brink·Ion Cosma Fulga·Joseph Dufouleur·Romain Giraud

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Abstract

Multi-terminal topological devices are a new generation of electronic devices with quantized properties robust against imperfections. In magnetic topological insulators, dissipationless edge states give functional devices in zero magnetic field, of interest for quantum metrology (resistance standard) or topological electronics (Chern networks). Here we show that a new generation of simple quantum circuits (disk, ring) with non-Hermitian topology, based on the interconnection of 1D Chern states in the quantum anomalous Hall regime, can have a much stronger quantization of their invariant than that of the Chern invariant itself, when measured in a non-metrology grade setup - that is, in industry-relevant conditions. Remarkably, the chirality-related topological skin effect is realized without the need of a magnetic field or an electrical gate, with a record degree of localization for a quantum Hall device. This new type of topological quantum devices based on magnets, with an exponential response that can be switched at small magnetic fields (about 200mT), can operate at liquid-Helium temperature with a good quantization and have some potential as cryogenic sensors for applications in high-precision impedance or magnetic field measurements.

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Kyrylo Ochkan, Michael Wissmann, Louis Veyrat, Lixuan Tai, Minoru Kawamura, Yoshinori Tokura, Viktor Könye, Bernd Büchner, Jeroen van den Brink, Ion Cosma Fulga, Joseph Dufouleur, Romain Giraud. 2025-12-25. Non-Hermitian topological devices with Chern insulators. https://doi.org/10.1016/j.newton.2026.100630

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