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arXiv · 2512.09684

Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates

A. E. Mavropoulis·P. Karakolis·N. Vasileiadis·L. Sygellou·E. Stavroulakis·V. Ioannou-Sougleridis·P. Normand·G. Ch. Sirakoulis·P. Dimitrakis
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Abstract

This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrogen doping. Detailed comparisons of electrical properties through nitrogen implantation reveal variations in trap density and SET-RESET voltages between n and p conductivity Si substrates. Impedance spectroscopy further elucidates the conductive path formation and its resistance.

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A. E. Mavropoulis, P. Karakolis, N. Vasileiadis, L. Sygellou, E. Stavroulakis, V. Ioannou-Sougleridis, P. Normand, G. Ch. Sirakoulis, P. Dimitrakis. 2025-12-10. Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates. https://doi.org/10.1109/nano63165.2025.11113675

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