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arXiv · 2512.09681

Breakdown characteristics of SiNx with different stoichiometries for resistive memories

A. E. Mavropoulis·I. Kanellopoulos·G. Pissanos·G. Samara·N. Vasileiadis·E. Stavroulakis·P. Normand·G. Ch. Sirakoulis·P. Dimitrakis
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Abstract

The breakdown characteristics of SiNx layers with different stoichiometries are explored. The stoichiometry of SiNx is modified by changing the gas flow rates during the LPCVD deposition. These layers are suitable for RRAM cells.

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A. E. Mavropoulis, I. Kanellopoulos, G. Pissanos, G. Samara, N. Vasileiadis, E. Stavroulakis, P. Normand, G. Ch. Sirakoulis, P. Dimitrakis. 2025-12-10. Breakdown characteristics of SiNx with different stoichiometries for resistive memories. https://doi.org/10.1109/nmdc64551.2025.11234186

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