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arXiv · 2512.05407

Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices

D. P. Goronzy·W. W. Mah·P. G. Lim·T. Guess·S. Majumder·D. A. Garcia-Wetten·M. J. Walker·J. Ramirez·W. -R. Syong·D. Bennett·M. Vissers·R. dos Reis·T. Pham·V. P. Dravid·M. C. Hersam·M. J. Bedzyk·C. R. H. McRae
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Abstract

Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for pentoxides of Nb (Nb2O5) and Ta (Ta2O5) in order to further understand limiting losses in qubits. Nb and Ta pentoxides of three thicknesses are deposited via pulsed laser deposition onto identical coplanar waveguide resonators. The two-level system (TLS) loss in Nb2O5 is determined to be about 30% higher than that of Ta2O5. This work indicates that qubits with Nb wiring are affected by higher loss arising from the native pentoxide itself, likely in addition to the presence of suboxides, which are largely absent in Ta.

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D. P. Goronzy, W. W. Mah, P. G. Lim, T. Guess, S. Majumder, D. A. Garcia-Wetten, M. J. Walker, J. Ramirez, W. -R. Syong, D. Bennett, M. Vissers, R. dos Reis, T. Pham, V. P. Dravid, M. C. Hersam, M. J. Bedzyk, C. R. H. McRae. 2025-12-05. Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices. https://arxiv.org/abs/2512.05407

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