Modelling and experimental verification of photoelectrical response of NV diamond spin centres

Abstract

We report on a mathematical model of the photoelectric response of NV colour centres in diamond, that can be employed for sensing and quantum science information applications. Although the model applies to NV centre in diamond, it can be applied with small modifications to other semiconducting solid state qubits. In our model, we include the drift and collection of charge carriers as well as the presence of other defects via generation and recombination dynamics. Though the photoluminescence readout and the associated dynamics of the NV defect has been extensively studied experimentally and theoretically, so far, there has been no precise model for photocurrent readout, including these effects. In our description, we use a multilevel-level system including mS=0, mS=+-1 ground and excited states, singlet state and the NV0 neutral state. Also, the presence of substitutional nitrogen (NS), which for example determines the spin coherence via the paramagnetic spin bath, is discussed together with presence of acceptor defects. We model the time-dependent occupation of all electronic sublevels and also consider the electronic charge transport from the Boltzmann transport equation, leading to information about the charge state transitions and recombination dynamics. ODMR and PDMR response as well as their quantum efficiencies, are calculated. On this basis, we determine an optimal parameter space for qubit operations, including the highest spin contrast and especially relate those to NS presence. The model is confirmed experimentally and can become a useful tool for optimisation of the performance of NV qubit photoelectric readout.