High-Purity Diamond Integration on $β$-Ga$_2$O$_3$ via Microwave Plasma CVD for Enhanced Thermal Management

Abstract

The integration of diamond with $β$-Ga$_2$O$_3$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conductivity of $β$-Ga$_2$O$_3$ can lead to localized self-heating and elevated junction temperatures. In this work, we demonstrate a scalable, low-damage approach for integrating polycrystalline diamond films on (010) $β$-Ga$_2$O$_3$ substrates via microwave plasma chemical vapor deposition (MPCVD), employing dielectric interlayers and polymer-assisted electrostatic nanodiamond seeding to systematically evaluate the impact of growth conditions on film morphology, grain evolution, phase purity, and optical characteristics. At a growth temperature of 800$^\circ$C, progressive grain coarsening is observed with extended deposition, with the lateral grain size increasing from 37.6 nm (53 nm thickness) to 192.5 nm for an 886 nm-thick film. This microstructural evolution is accompanied by narrowing of the diamond Raman peak and a monotonic increase in the sp$^3$ phase fraction from 95.9\% to as high as 98.9\%, indicating continued suppression of non-diamond carbon with prolonged growth. Comparison of SiO$_2$ and SiN$_x$ interlayers under identical growth conditions shows only marginal differences in grain size and phase purity, indicating limited interlayer influence once a high nucleation density is established. Importantly, diamond films exhibiting greater than 96\% sp$^3$ phase content were achieved at substrate temperatures as low as 480$^\circ$C, highlighting the viability of diamond-on-Ga$_2$O$_3$ integration under reduced thermal budgets. These findings establish a robust and scalable platform for integrating diamond on $β$-Ga$_2$O$_3$, supporting the development of next-generation power and RF devices with improved thermal management.