Formation of C-centers in Si-based systems by light ion irradiation

Carolina Crosta; Riccardo Nardin; Patrick Daoust; Stefano Achilli; Ian Colombo; Matteo Campostrini; Emiliano Bonera; Jacopo Pedrini; Oussama Moutanabbir; Valentino Rigato; Fabio Pezzoli

arXiv · 2510.12690

Formation of C-centers in Si-based systems by light ion irradiation

Carolina Crosta·Riccardo Nardin·Patrick Daoust·Stefano Achilli·Ian Colombo·Matteo Campostrini·Emiliano Bonera·Jacopo Pedrini·Oussama Moutanabbir·Valentino Rigato·Fabio Pezzoli

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Abstract

Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared color centers for long- haul quantum communication and information still remains a challenge. In this work, we utilize light ions, such as H+ and He+, to gently generate quantum emitters in a crystalline Si matrix. Temperature-dependent photoluminescence measurements demonstrate the presence of optically-active defects, whose fluorescence matches the primary telecom window around 1550 nm. In addition, time-resolved investigations unveil long-lived excitonic states in the {\mu}s regime, thus confirming the formation of interstitial oxygen-carbon complexes, termed C-centers. Finally, we explored controlled ion irradiation strategies to seamlessly generate C-centers also in Ge-on-Si heterostructures, which offer an advanced technological platform for the future realization of integrated quantum photonics. This analysis, informed by practical color center synthesis and proof-of-principle experiments in epitaxial architectures, indicates intriguing prospects and profitable strategies to advance the burgeoning field of light-based quantum technologies.

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Carolina Crosta, Riccardo Nardin, Patrick Daoust, Stefano Achilli, Ian Colombo, Matteo Campostrini, Emiliano Bonera, Jacopo Pedrini, Oussama Moutanabbir, Valentino Rigato, Fabio Pezzoli. 2025-10-14. Formation of C-centers in Si-based systems by light ion irradiation. https://arxiv.org/abs/2510.12690

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