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arXiv · 2508.01066

Cryogenic rf-to-microwave transducer based on a dc-biased electromechanical system

Himanshu Patange·Kyrylo Gerashchenko·Rémi Rousseau·Paul Manset·Léo Balembois·Thibault Capelle·Samuel Deléglise·Thibaut Jacqmin
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Abstract

We report a two-stage, heterodyne rf-to-microwave transducer that combines a tunable electrostatic pre-amplifier with a superconducting electromechanical cavity. A metalized Si$_3$N$_4$ membrane (3 MHz frequency) forms the movable plate of a vacuum-gap capacitor in a microwave LC resonator. A dc bias across the gap converts any small rf signal into a resonant electrostatic force proportional to the bias, providing a voltage-controlled gain that multiplies the cavity's intrinsic electromechanical gain. In a flip-chip device with a 1.5 $\mathrm{\mu}$m gap operated at 10 mK we observe dc-tunable anti-spring shifts, and rf-to-microwave transduction at 49 V bias, achieving a charge sensitivity of 87 $\mathrm{\mu}$e/$\sqrt{\mathrm{Hz}}$ (0.9 nV/$\sqrt{\mathrm{Hz}}$). Extrapolation to sub-micron gaps and state-of-the-art $Q>10^8$ membrane resonators predicts sub-200 fV/$\sqrt{\mathrm{Hz}}$ sensitivity, establishing dc-biased electromechanics as a practical route towards quantum-grade rf electrometers and low-noise modular heterodyne links for superconducting microwave circuits and charge or voltage sensing.

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Himanshu Patange, Kyrylo Gerashchenko, Rémi Rousseau, Paul Manset, Léo Balembois, Thibault Capelle, Samuel Deléglise, Thibaut Jacqmin. 2025-08-01. Cryogenic rf-to-microwave transducer based on a dc-biased electromechanical system. https://doi.org/10.5802/crphys.273

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