Device-scale modeling of valley photovoltaics

Daixi Xia; Hassan Allami; Jacob J. Krich

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arXiv · 2507.20054

Device-scale modeling of valley photovoltaics

Daixi Xia·Hassan Allami·Jacob J. Krich

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Abstract

We present a Poisson/drift-diffusion model that includes valley scattering effects for simulating valley photovoltaic devices. The valley photovoltaic concept is a novel implementation of a hot-carrier solar cell and leverages the valley scattering effect under large electric field to potentially achieve high voltage and high efficiency. Fabricated devices have shown S-shaped current-voltage curves, low fill factor, and thus low efficiency. We hence develop the first device model for valley photovoltaics. Our model includes electric-field-dependent valley scattering rates extracted from previous ensemble Monte Carlo simulations. We show that the condition of nonequilibrium carrier populations in the satellite valleys is not enough for valley photovoltaics to achieve high efficiency. We also show that increasing the built-in electric field of the valley-scattering region does not improve efficiency, contrary to previous suggestion.

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Daixi Xia, Hassan Allami, Jacob J. Krich. 2025-07-26. Device-scale modeling of valley photovoltaics. https://arxiv.org/abs/2507.20054

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