arXiv ScienceSearch

arXiv · 2507.19286

Leaky-wave Coil Element with Improved Tx-efficiency for 7 T MRI Using a Non-Uniform Current Design

Abstract

Imaging of the human body at ultra-high fields (static magnetic field B0>7 Tesla) is challenging due to the radio-frequency field inhomogeneities in the human body tissues caused by the short wavelength. These effects could be partially mitigated using an array of antennas and by parallel transmission allowing for control of the radio-frequency field distribution in the region of interest. All commonly-used radio-frequency arrays for ultra-high field MRI consist of resonant elements: dipoles, TEM-resonators, loops and individual slots. All these elements rely on standing wave excitation, in the sense that they are resonant devices that produce a field pattern with a constant phase distribution along the commensurable conductor elements. However, it was shown previously, that a non-uniform phase of surface current is required to reach the ultimate intrinsic signal-to-noise ratio or a maximized signal in the desired region of interest. In our work we propose to use a previously demonstrated non-resonant leaky-wave approach to control the phase of currents in radio-frequency coil conductors to increase the B1+ field in the center or in the region of interest. Using this approach, we developed a radio-frequency coil based on a leaky-wave antenna approach with optimized surface current distribution resulting in stronger B1+ in the desired region compared to e.g. a fractionated dipole.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

K. Popova, R. Balafenidev, J. T. Svejda, A. Rennings, A. J. Raaijmakers, C. M. Collins, R. Lattanzi, D. Erni, G. Solomakha. 2026-03-20. Leaky-wave Coil Element with Improved Tx-efficiency for 7 T MRI Using a Non-Uniform Current Design. https://arxiv.org/abs/2507.19286

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph