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arXiv · 2507.11189

Silicon nitride on-chip C-band spontaneous emission generation based on lanthanide doped microparticles

Dmitry V. Obydennov·Ilya M. Asharchuk·Alexander M. Mumlyakov·Maxim V. Shibalov·Nikolay A. Vovk·Ivan A. Filippov·Lidiya S. Volkova·Michael A. Tarkhov
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Abstract

The integration of active light-emitting elements into planar photonic circuits on a silicon nitride platform remains challenging due to material incompatibilities and high-temperature processing. Proposed hybrid method embeds monodisperse luminescent particles into lithographically defined wells above a 200 nm-thick silicon nitride taper coupler. A fabrication process involving wells etching, particle deposition, and planarization enables precise integration while maintaining waveguide integrity. When pumped at 950 nm with a diode laser, the device emits broadband radiation in the 1500-1600 nm range, covering the optical telecommunication C-band. Numerical simulations yield an average coupling efficiency of 0.25% into the fundamental waveguide mode, suggesting significant potential for further device optimization. The approach provides a scalable route for integrating broadband telecommunications emitters on a silicon nitride platform.

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Dmitry V. Obydennov, Ilya M. Asharchuk, Alexander M. Mumlyakov, Maxim V. Shibalov, Nikolay A. Vovk, Ivan A. Filippov, Lidiya S. Volkova, Michael A. Tarkhov. 2025-07-15. Silicon nitride on-chip C-band spontaneous emission generation based on lanthanide doped microparticles. https://doi.org/10.1016/j.optlastec.2026.114834

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