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arXiv · 2507.10848

Spin ordering-induced fully-compensated ferrimagnetism

San-Dong Guo·Shaobo Chen·Guangzhao Wang
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Abstract

Fully-compensated ferrimagnets exhibit zero net magnetic moment yet display non-relativistic global spin splitting, making them highly advantageous for constructing high-performance spintronic devices. The general strategy is to break the inversion symmetry of conventional antiferromagnets or the rotational/mirror symmetry of altermagnets to achieve fully-compensated ferrimagnets. Here, we propose to induce fully-compensated ferrimagnetism by engineering the spin ordering rather than modifying the lattice structure. Bilayer stacking engineering offers a convenient platform to verify our proposal and readily enables switching between two distinct electronic states by tuning the $\mathrm{N\acute{e}el}$ vector of one layer. By the first-principles calculations, a bilayer system is constructed with monolayer $\mathrm{Cr_2C_2S_6}$ as the elementary building block to corroborate our proposal. This strategy can also be extended to inducing altermagnetism via spin ordering engineering. Our work offers an alternative route to realize non-relativistic spin splitting in zero-net-magnetization magnets, paving the way for the advancement and construction of low-power spintronic device.

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San-Dong Guo, Shaobo Chen, Guangzhao Wang. 2025-07-14. Spin ordering-induced fully-compensated ferrimagnetism. https://arxiv.org/abs/2507.10848

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