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arXiv · 2507.03785

Implantation studies of low-energy positive muons in niobium thin films

Ryan M. L. McFadden·Andreas Suter·Leon Ruf·Angelo Di Bernardo·Arnold M. Müller·Thomas Prokscha·Zaher Salman·Tobias Junginger
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Abstract

Here we study the range of keV positive muons $\mu^+$ implanted in Nb$_2$O$_5$($x$ nm)/Nb($y$ nm)/SiO$_2$(300 nm)/Si [$x$ = 3.6 nm, 3.3 nm; $y$ = 42.0 nm, 60.1 nm] thin films using low-energy muon spin spectroscopy (LE-$\mu$SR). At implantation energies 1.3 keV $\leq E \leq$ 23.3 keV, we compare the measured diamagnetic $\mu^+$ signal fraction $f_{\mathrm{dia.}}$ against predictions derived from implantation profile simulations using the TRIM.SP Monte Carlo code. Treating the implanted $\mu^+$ as light protons, we find that simulations making use of updated stopping cross section data are in good agreement with the LE-$\mu$SR measurements, in contrast to parameterizations found in earlier tabulations. Implications for other studies relying on accurate $\mu^+$ stopping information are discussed.

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Ryan M. L. McFadden, Andreas Suter, Leon Ruf, Angelo Di Bernardo, Arnold M. Müller, Thomas Prokscha, Zaher Salman, Tobias Junginger. 2025-07-04. Implantation studies of low-energy positive muons in niobium thin films. https://doi.org/10.1016/j.nimb.2025.165954

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