First-principles Quantum Insights into Bandgap Engineering, Valley Quantum Hall Effect, and Nonlinear Optical Response of Ge-Doped Graphene for Potential Optoelectronic Applications

Abstract

The valley in the band structure of materials has gained a lot of attention recently. The promising applications of the valley degree of freedom include the next-generation valleytronic devices, quantum information processing, quantum computing, and optoelectronic devices. Graphene is an ideal quantum material for high-speed valleytronic applications because of its high carrier mobility and convenience of bandgap engineering. Employing first-principles density functional theoretical approach, this study opted bandgap engineering strategy via Germanium doping to open bandgap and enhance valley selectivity in graphene monolayers. The impact of Ge dopant concentration of 2%, 3.125%, 5.5%, and 12.5% is explored on the valleytronic; valley Hall effect, valley transport, and optical properties. The reported results demonstrate that bandgap, valley polarization, and second harmonic generation can be tuned effectively by varying doping concentration of Germanium. The Berry curvature profile is antisymmetric for corresponding K and K' valleys, thus leading to valley-dependent transport properties and a potential valley Hall effect. Finally, the second-order susceptibilities exhibit corresponding optical absorption peaks, indicating efficient second-harmonic generation due to the broken inversion symmetry. These findings highlight the potential of Ge-doped graphene for nonlinear optics and valleytronics applications, while providing novel insights into its topological phase and transport properties.