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arXiv · 2506.04448

Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride

Mohammad Abdullah Sadi·Luca Basso·David A Fehr·Xingyu Gao·Sumukh Vaidya·Emmeline G Riendeau·Gajadhar Joshi·Tongcang Li·Michael E Flatté·Andrew M Mounce·Yong P Chen
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Abstract

Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional platform for quantum sensing, due to its optically addressable spin defects, such as the negatively charged boron vacancy ($V_{\text{B}}^-$). Despite hBN being transferrable to close proximity to samples, spectral overlap of spin transitions due to large hyperfine interactions has limited its magnetic sensitivity. Here, we demonstrate spin-selective excitation of $V_{\text{B}}^-$ spin defects in hBN driven by circularly polarized microwave. Using a cross-shaped microwave resonance waveguide, we superimpose two orthogonally linearly polarized microwave shifted in phase from a RFSoC FPGA to generate circularly polarized microwaves. This enables selective spin $|0\rangle\rightarrow|-1\rangle$ or $|0\rangle\rightarrow|1\rangle$ excitation of $V_{\text{B}}^-$ defects, as confirmed by optically detected magnetic resonance experimentally and supported computationally. We also investigate the influence of magnetic field on spin-state selectivity. Our technique enhances the potential of hBN platform for quantum sensing through better spin state control and magnetic sensitivity particularly at low fields.

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Mohammad Abdullah Sadi, Luca Basso, David A Fehr, Xingyu Gao, Sumukh Vaidya, Emmeline G Riendeau, Gajadhar Joshi, Tongcang Li, Michael E Flatté, Andrew M Mounce, Yong P Chen. 2025-06-04. Spin-State Selective Excitation in Spin Defects of Hexagonal Boron Nitride. https://doi.org/10.1021/acs.nanolett.5c03056

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