arXiv · 2505.19224
Nano-Raman Spectroscopy Analysis of Nanoprotuberances in MoSe2
Abstract
Contaminations in the formation of two-dimensional heterostructures can hinder or generate desired properties. Recent advancements have highlighted the potential of tip-enhanced Raman spectroscopy (TERS) for studying materials in the 2D semiconductor class. In this work, we investigate the influence of 50-200nm sized nanoprotuberances within a monolayer of MoSe$_2$ deposited on hBN using nano-Raman spectroscopy, establishing correlations between the presence of localized contaminations and the observed hyperspectral variations. A figure of merit is established for the identification of surface impurities, based on MoSe$_2$ peaks ratio. Notably, new spectral peaks were identified, which are associated with the presence of nanoprotuberances and may indicate contamination and oxidation.
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Jane Elisa Guimarães, Rafael Nadas, Rayan Alves, Wenjin Zhang, Takahiko Endo, Kenji Watanabe, Takashi Taniguchi, Riichiro Saito, Yasumitsu Miyata, Bernardo R. A. Neves, Ado Jorio. 2025-05-25. Nano-Raman Spectroscopy Analysis of Nanoprotuberances in MoSe2. https://doi.org/10.1021/acsnano.5c08036
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