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arXiv · 2505.04244

Spin-valve effect for spin-polarized surface states in topological semimetals

A. A. Avakyants·V. D. Esin·D. Yu. Kazmin·N. N. Orlova·A. V. Timonina·N. N. Kolesnikov·E. V. Deviatov
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Abstract

We experimentally investigate magnetoresistance of a single GeTe-Ni junction between the $\alpha$-GeTe topological semimetal and thick nickel film at room and liquid helium temperatures. For the magnetic field parallel to the junction plane, we demonstrate characteristic spin-valve hysteresis with mirrored differential resistance $dV/dI$ peaks even at room temperature. In contrast, for normal magnetic fields spin-valve effect appears only at low temperatures. From the magnetic field anisotropy, observation of the similar effect for another topological semimetal Cd$_3$As$_2$, and strictly flat $dV/dI(H)$ magnetoresistance curves for the reference GeTe-Au junction, we connect the observed spin-valve effect with the spin-dependent scattering between the spin textures in the topological surface states and the ferromagnetic nickel electrode. For the topological semimetal $\alpha$-GeTe, room-temperature spin-valve effect allows efficient spin-to-charge conversion even at ambient conditions.

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A. A. Avakyants, V. D. Esin, D. Yu. Kazmin, N. N. Orlova, A. V. Timonina, N. N. Kolesnikov, E. V. Deviatov. 2025-05-07. Spin-valve effect for spin-polarized surface states in topological semimetals. https://doi.org/10.1134/s0021364025606293

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