Doping-induced Spin Reorientation in Kagome Magnet TmMn6Sn6

Mohamed El Gazzah; Po-Hao Chang; Y. Lee; Hari Bhandari; Resham Regmi; Xiuqan Zhou; John F. Mitchell; Liqin Ke; Igor I. Mazin; Nirmal J. Ghimire

arXiv · 2505.02936

Doping-induced Spin Reorientation in Kagome Magnet TmMn6Sn6

Mohamed El Gazzah·Po-Hao Chang·Y. Lee·Hari Bhandari·Resham Regmi·Xiuqan Zhou·John F. Mitchell·Liqin Ke·Igor I. Mazin·Nirmal J. Ghimire

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Abstract

The kagome-lattice compounds RMn6Sn6 (R is a rare earth element), where the Mn atoms form a kagome net in the basal plane, are currently attracting a great deal of attention as they have been shown to host complex magnetic textures and electronic topological states strongly sensitive to the choice of the R atom. Among the magnetic R atoms, TmMn6Sn6 orders with the easy-plane magnetization forming a complex magnetic spiral along the c-axis. Previous neutron studies, carried on polycrystalline, samples found that Ga doping changes the magnetic anisotropy from easy-plane to easy-axis. Here we present magnetic and magnetotransport measurements on a single crystal and first principles calculations in the doping series of TmMn6Sn6-xGax. We find that the magnetic properties are highly sensitive even to a small concentration of Ga. With minimal Ga substitution, the easy-plane anisotropy is maintained, which gradually changes to the easy-axis anisotropy with increasing Ga. We discuss these observations with respect to the effect of Ga doping on magnetocrystalline anisotropy and Tm crystal field

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Mohamed El Gazzah, Po-Hao Chang, Y. Lee, Hari Bhandari, Resham Regmi, Xiuqan Zhou, John F. Mitchell, Liqin Ke, Igor I. Mazin, Nirmal J. Ghimire. 2025-05-05. Doping-induced Spin Reorientation in Kagome Magnet TmMn6Sn6. https://arxiv.org/abs/2505.02936

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