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arXiv · 2505.01905

Ferroelectric Switching in Hybrid Molecular Beam Epitaxy-Grown BaTiO3 Films

Anusha Kamath Manjeshwar·Zhifei Yang·Chin-Hsiang Liao·Jiaxuan Wen·Steven J. Koester·Richard D. James·Bharat Jalan
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Abstract

Molecular beam epitaxy (MBE) is a promising synthesis technique for both heterostructure growth and epitaxial integration of ferroelectric BaTiO3. However, a direct measurement of the remnant polarization (P_r) has not been previously reported in MBE-grown BaTiO3 films. We report the in-situ growth of an all-epitaxial SrRuO3/BaTiO3/SrRuO3 heterostructure on Nb-doped SrTiO3 (001) substrates by hybrid MBE using metal-organic precursors. This capacitor structure consisting of 16 nm SrRuO3/40 nm BaTiO3/16 nm SrRuO3 shows hysteretic polarization-electric field (P-E) curves with P_r = 15 {\mu}C cm-2 at frequencies ranging from 500 Hz to 20 kHz, after isolating the intrinsic ferroelectric response from non-ferroelectric contributions using the Positive-Up-Negative-Down (PUND) method. We hypothesize that the asymmetry in switching behavior and current leakage has origins in structural defects.

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Anusha Kamath Manjeshwar, Zhifei Yang, Chin-Hsiang Liao, Jiaxuan Wen, Steven J. Koester, Richard D. James, Bharat Jalan. 2025-05-03. Ferroelectric Switching in Hybrid Molecular Beam Epitaxy-Grown BaTiO3 Films. https://arxiv.org/abs/2505.01905

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