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arXiv · 2505.00575

Unveiling competitions between carrier recombination pathways in semiconductors via mechanical damping

Mingyu Xie·Ruitian Chen·Jiaze Wu·Kaiqi Qiu·Mingqiang Li·Huicong Chen·Kai Huang·Yu Zou
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Abstract

The total rate of carrier recombination in semiconductors has conventionally been expressed using an additive model, r_total = \Sigma r_i , which rules out the interactions between carrier recombination pathways. Here we challenge this paradigm by demonstrating pathway competitions using our newly developed light-induced mechanical absorption spectroscopy (LIMAS), which allows us to probe genuine recombination dynamics in semiconductors via mechanical damping. We show that the total recombination rate in zinc sulfide (ZnS), a model semiconductor material, follows a multiplicative weighting model, r_total \propto \Pi r_i ^(w_i) with \Sigma w_i=1. Under both steady-state and switch-on illuminations, the weighting factors w_i for each recombination pathway-direct, trap-assisted, and sublinear-are dictated by the carrier generation mechanism: (i) interband transition favors direct recombination; (ii) single-defect level-mediated generation promotes trap-assisted recombination; (iii) generation involving multiple saturated defect levels gives rise to sublinear recombination. Upon light switch-off, localized state changes drive a dynamic evolution of w_i, altering pathway competitions. These findings reshape our fundamental understanding of carrier dynamics and provide a new strategy to optimize next-generation optoelectronic devices.

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Mingyu Xie, Ruitian Chen, Jiaze Wu, Kaiqi Qiu, Mingqiang Li, Huicong Chen, Kai Huang, Yu Zou. 2025-05-01. Unveiling competitions between carrier recombination pathways in semiconductors via mechanical damping. https://arxiv.org/abs/2505.00575

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