arXiv ScienceSearch

arXiv · 2504.18363

Anisotropic Piezomagnetism in Noncollinear Antiferromagnets

Abstract

In 3d-electron magnetic systems, the magnetic structures that transform each other by spin rotation have very close degenerate energies due to small spin-orbit coupling and can be easily controlled by chemical substitution and external magnetic fields. We investigate anisotropic piezomagnetic effects, exhibiting the different magnetic responses depending on the type of strain and the magnetic structures, for non-collinear magnetic states in Mn$_3A$N ($A=$ Ni, Cu, Zn, Ga) and Mn$_3X$ ($X$= Sn and Ge) based on detailed symmetry analysis using spin group and magnetic group and first-principles calculations of piezomagnetic responses. In Mn$_3A$N, magnetization develops along two distinct directions under the same applied stress, corresponding to two AFM states connected by spin rotation. Analysis of the piezomagnetic tensor based on magnetic and spin point groups for the states with and without spin-orbit coupling, respectively, shows that the difference in the magnitude of magnetization along different directions is attributed to the spin-orbit coupling. Mn$_3X$ are known to stabilize different AFM structures in the directions of the applied in-plane magnetic fields. Under uniaxial stress along the orthorhombic $x$ and $y$ axes, magnetization is induced without breaking the magnetic symmetry, but it develops in the opposite direction due to exchange interaction. Our study demonstrates that the direction and sign of strain-induced magnetization in Mn$_3A$N and Mn$_3X$ can be effectively controlled by strain in combination with magnetic fields. These findings highlight the potential for strain-tunable magnetic devices in noncollinear AFMs.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Vu Thi Ngoc Huyen, Yuki Yanagi, Michi-To Suzuki. 2025-04-25. Anisotropic Piezomagnetism in Noncollinear Antiferromagnets. https://doi.org/10.1103/wcwq-bfhb

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

$Ab$ $initio$ Study of Substitutional Defects in Li$_{3}$OCl Solid Electrolyte for Li-ion Batteries

Improving ion transport in solid electrolytes and cathode coatings remains a key challenge for all-solid-state Li-ion batteries because their room-temperature ionic conductivity is still substantially lower than that of liquid electrolytes. In our previous combined experimental and theoretical study, we showed that thermal neutron irradiation enables defect engineering in LiBO$_2$ through the transmutation of $^6$Li and $^{10}$B, generating lattice vacancies that enhance ionic conductivity. Here, we examine whether this approach can be extended to Li$_3$OCl, a representative antiperovskite solid electrolyte. Using density functional theory, we investigate substitutional defects at Li sites involving B, He, and H, associated with B doping and the neutron-capture reactions $^{6}\mathrm{Li}+n\rightarrow\,^{3}\mathrm{H}+α$ and $^{10}\mathrm{B}+n\rightarrow\,^{7}\mathrm{Li}+α+γ$. We evaluate defect formation energetics, the resulting structural distortions, and compare these substitutional defects with other mono-, di-, and trication substitutions at Li sites. Our results show that substitutional defects associated with neutron irradiation provide a feasible route to tune the defect chemistry of antiperovskite solid electrolytes and support neutron-driven defect engineering as a strategy for developing advanced materials for high-performance all-solid-state Li-ion batteries.

cond-mat.mtrl-sci

High-magnitude, spatially and directionally programmable, and sustained strain engineering of 2D semiconductors

Crystalline two-dimensional (2D) semiconductors often combine high elasticity and in-plane strength, making them ideal for strain-induced tuning of electronic characteristics, akin to strategies used in silicon electronics. However, existing techniques have not achieved strain in 2D materials that is simultaneously high in magnitude (>1%), stable over long periods, and spatially and directionally programmable. In this context, programmable strain means that the strain level and direction can be deterministically engineered across a single layer. Here, we apply spatially programmable biaxial strain (e_b) up to ~2.2% with a spatial gradient of ~0.1 %e_b um-1 in monolayer MoS2 via conformal transfer onto patterned substrates fabricated using two-photon lithography. The induced e_b is stable for months and enables local band gap tuning of ~0.4 eV in monolayer MoS2, ~25% of its intrinsic band gap. Further, by tailoring substrate topography, we introduce uniaxial (anisotropic) strain, demonstrating control over both strain magnitude and direction. We also extend this strain engineering framework to MoS2-WS2 bilayer heterostructures. Overall, we introduce a distinct regime of strain-enabled control in 2D semiconductors to support the development of optoelectronics and nanoelectronics with engineered optical and electronic landscapes.

cond-mat.mtrl-sci

Octupole-driven spin torque switching of antiferromagnetic tunnel junctions

Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection and control of magnetic order through the tunneling magnetoresistance (TMR) and spin-transfer torque (STT) effects, respectively. It was long assumed that neither of these effects could be sizeable in all-antiferromagnetic tunnel junctions (AATJs), since they exhibit no net magnetization. Recently, however, it was shown that AATJs based on chiral antiferromagnets do exhibit TMR due to their non-relativistic momentum-dependent spin polarization and cluster magnetic octupole moment (CMO), which are manifestations of their spin-split band structure. However, the reciprocal effect, i.e., the antiferromagnetic counterpart of STT, has been assumed non-existent due to the total electric current being spin-neutral. Here, we report nanoscale AATJs exhibiting this reciprocal effect, which we term octupole-driven spin-transfer torque (OTT). We demonstrate current-induced OTT switching of PtMn3|MgO|PtMn3 AATJs, exhibiting a TMR value of 363% at room temperature and switching current densities of the order of 10 MA/cm2. Our theoretical modeling explains the origin of OTT in terms of the imbalance between intra- and inter-sublattice spin currents across the AATJ, and equivalently, in terms of the non-zero net cluster octupole polarization of each PtMn3 layer. This work establishes a new materials platform for antiferromagnetic spintronics and provides a pathway towards deeply scaled magnetic memory and room-temperature terahertz technologies.

cond-mat.mtrl-sci