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arXiv · 2502.14542

Lattice distortion tuning resistivity invar effect in high entropy alloys

Hao Chen·Yuanji Xu·Lihua Liu·Yue Chen·Jan Wróbel·Daoyong Cong·Fuyang Tian·Yang Wang
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Abstract

Materials with an ultra-low temperature coefficient of resistivity are desired for the temperature and flow sensors in high-precision electronic measuring systems. In this work, the Kubo-Greenwood formula, implemented in ab initio molecular dynamics simulations, is employed to predict the finite-temperature resistivity of multi-component alloys with severe lattice distortion. We observe a tiny change in resistivity over a wide temperature range in high-entropy alloys. The electronic resistivity invar effect in B2 Ni$_{25}$Co$_{25}$(HfTiZr)$_{50}$ Elinvar alloys results from a balance between intrinsic and residual resistivity. This effect is associated with atomic displacements from ideal lattice sites, which are caused by lattice thermal vibrations and chemical disorder-induced lattice distortions. It is further evidenced by a decrease in lattice distortion with temperature and changes in the electronic density of states.

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Hao Chen, Yuanji Xu, Lihua Liu, Yue Chen, Jan Wróbel, Daoyong Cong, Fuyang Tian, Yang Wang. 2025-02-20. Lattice distortion tuning resistivity invar effect in high entropy alloys. https://doi.org/10.1103/physrevb.111.094209

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