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arXiv · 2502.11232

Strain engineering of valley-polarized hybrid excitons in a 2D semiconductor

Abstract

Encoding and manipulating digital information in quantum degrees of freedom is one of the major challenges of today's science and technology. The valley indices of excitons in transition metal dichalcogenides (TMDs) are well-suited to address this challenge. Here, we demonstrate a new class of strain-tunable, valley-polarized hybrid excitons in monolayer TMDs, comprising a pair of energy-resonant intra- and intervalley excitons. These states combine the advantages of bright intravalley excitons, where the valley index directly couples to light polarization, and dark intervalley excitons, characterized by low depolarization rates. We demonstrate that the hybridized state of dark KK' intervalley and defect-localized excitons exhibits a degree of circular polarization of emitted photons that is three times higher than that of the constituent species. Moreover, a bright KK intravalley and a dark KQ exciton form a coherently coupled hybrid state under energetic resonance, with their valley depolarization dynamics slowed down a hundredfold. Overall, these valley-polarized hybrid excitons with strain-tunable valley character emerge as prime candidates for valleytronic applications in future quantum and information technology.

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Abhijeet M. Kumar, Douglas J. Bock, Denis Yagodkin, Edith Wietek, Bianca Höfer, Max Sinner, Pablo Hernández López, Sebastian Heeg, Cornelius Gahl, Florian Libisch, Alexey Chernikov, Ermin Malic, Roberto Rosati, Kirill I. Bolotin. 2025-02-16. Strain engineering of valley-polarized hybrid excitons in a 2D semiconductor. https://arxiv.org/abs/2502.11232

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