Effect of SOI substrate on silicon nitride resistance switching using MIS structure

A Mavropoulis; N Vasileiadis; C Theodorou; L Sygellou; P Normand; G Ch Sirakoulis; P Dimitrakis

doi:10.1016/j.sse.2022.108375

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arXiv · 2502.02119

Effect of SOI substrate on silicon nitride resistance switching using MIS structure

A Mavropoulis·N Vasileiadis·C Theodorou·L Sygellou·P Normand·G Ch Sirakoulis·P Dimitrakis

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Abstract

Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is presented. The RS characteristics are compared with the same devices previously fabricated on bulk silicon.

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A Mavropoulis, N Vasileiadis, C Theodorou, L Sygellou, P Normand, G Ch Sirakoulis, P Dimitrakis. 2025-02-04. Effect of SOI substrate on silicon nitride resistance switching using MIS structure. https://doi.org/10.1016/j.sse.2022.108375

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