Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

A. E. Mavropoulis; N. Vasileiadis; P. Normand; C. Theodorou; G. Ch. Sirakoulis; S. Kim; P. Dimitrakis

doi:10.1016/j.sse.2024.109035

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arXiv · 2502.01346

Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

A. E. Mavropoulis·N. Vasileiadis·P. Normand·C. Theodorou·G. Ch. Sirakoulis·S. Kim·P. Dimitrakis

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Abstract

The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.

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A. E. Mavropoulis, N. Vasileiadis, P. Normand, C. Theodorou, G. Ch. Sirakoulis, S. Kim, P. Dimitrakis. 2025-02-03. Effect of Al2O3 on the operation of SiNX-based MIS RRAMs. https://doi.org/10.1016/j.sse.2024.109035

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