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arXiv · 2501.17527

Selective Fabrication of Monolayer 1H- and 1T'-WTe2

Ryuichi Ando·Katsuaki Sugawara·Tappei Kawakami·Takashi Takahashi·Takafumi Sato
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Abstract

We selectively fabricated monolayers of octahedral (1H) and distorted trigonal (1T') WTe2 on graphene/SiC(0001) by controlling the substrate temperature during epitaxy. Angle-resolved photoemission spectroscopy, combined with first-principles band-structure calculations, has revealed several drastic differences between these two polymorphs. The 1T' phase exhibits a semiconducting character with a nearly-zero energy gap, while the 1H phase shows a large band gap and the band splitting at the K/K' point. The present results pave a pathway toward developing nanoelectronic devices based with WTe2.

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Ryuichi Ando, Katsuaki Sugawara, Tappei Kawakami, Takashi Takahashi, Takafumi Sato. 2025-01-29. Selective Fabrication of Monolayer 1H- and 1T'-WTe2. https://doi.org/10.7566/jpsj.93.085002

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