Multi-Length-Scale Dopants Analysis of an Image Sensor via Focused Ion Beam-Secondary Ion Mass Spectrometry and Atom Probe Tomography

Bavley Guerguis; Ramya Cuduvally; Alexander Ost; Morvarid Ghorbani; Sabaa Rashid; Wilson Machado; Dan McGrath; Chris Pawlowicz; Brian Langelier; Nabil Bassim

arXiv · 2501.08980

Multi-Length-Scale Dopants Analysis of an Image Sensor via Focused Ion Beam-Secondary Ion Mass Spectrometry and Atom Probe Tomography

Bavley Guerguis·Ramya Cuduvally·Alexander Ost·Morvarid Ghorbani·Sabaa Rashid·Wilson Machado·Dan McGrath·Chris Pawlowicz·Brian Langelier·Nabil Bassim

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Abstract

The following article presents a multi-length-scale characterization approach for investigating doping chemistry and spatial distributions within semiconductors, as demonstrated using a state-of-the-art CMOS image sensor. With an intricate structural layout and varying doping types/concentration levels, this device is representative of the current challenges faced in measuring dopants within confined volumes using conventional techniques. Focused ion beam-secondary ion mass spectrometry is applied to produce large-area compositional maps with a sub-20 nm resolution, while atom probe tomography is used to extract atomic-scale quantitative dopant profiles. Leveraging the complementary capabilities of the two methods, this workflow is shown to be an effective approach for resolving nano- and micro- scale dopant information, crucial for optimizing the performance and reliability of advanced semiconductor devices.

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Bavley Guerguis, Ramya Cuduvally, Alexander Ost, Morvarid Ghorbani, Sabaa Rashid, Wilson Machado, Dan McGrath, Chris Pawlowicz, Brian Langelier, Nabil Bassim. 2025-01-15. Multi-Length-Scale Dopants Analysis of an Image Sensor via Focused Ion Beam-Secondary Ion Mass Spectrometry and Atom Probe Tomography. https://arxiv.org/abs/2501.08980

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