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arXiv · 2501.06063

Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2

Lihao Zhang·Miao He·Xiaoyu Wang·Haodong Zhang·Keying Han·Yonglai Liu·Lei Zhang·Yingchun Cheng·Jie Pan·Zhe Qu·Zhe Wang
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Abstract

We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states (DOS) at high energy levels. By adjusting the DOS weighting at different k points to account for misalignment between the crystal structure of electrodes in experimental devices, we improved agreement between experimental and theoretical inversion voltages. Our results provide valuable insight into the voltage-controlled spin injection and detection in two-dimensional magnetic tunnel junctions, with implications for the development of energy-efficient spintronic devices.

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Lihao Zhang, Miao He, Xiaoyu Wang, Haodong Zhang, Keying Han, Yonglai Liu, Lei Zhang, Yingchun Cheng, Jie Pan, Zhe Qu, Zhe Wang. 2025-01-10. Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2. https://doi.org/10.1088/1361-6463%2Fada44c

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