Photo-luminescence properties of ion implanted Er3+-defects in 4H-SiCOI towards integrated quantum photonics

Abstract

Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated circuits may enable precise control over their inherent photo-physical properties through strong light-matter interaction. Here, we investigate ion-implanted erbium ($\text{Er}^{3+}$) defects embedded in thin-film 4H-silicon-carbide-on-insulator (4H-SiCOI). Optimized implantation conditions and thermal annealing processes designed to enhance the emission characteristics of the $\text{Er}^{3+}$-defect are reported. By examining key properties such as photoluminescence intensity, optical lifetime, and polarization, we present an analysis of ensemble $\text{Er}^{3+}$-defects within 4H-SiCOI, providing insights into their potential for future quantum applications.