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arXiv · 2412.15157

Centimetre-Scale Micro-Transfer Printing to enable Heterogeneous Integration of Thin Film Lithium Niobate with Silicon Photonics

Margot Niels·Tom Vanackere·Tom Vandekerckhove·Stijn Poelman·Tom Reep·Günther Roelkens·Maximilien Billet·Bart Kuyken
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Abstract

The integrated photonics CMOS-compatible silicon nitride (SiN) platform is praised for its low propagation loss, but is limited by its lack of active functionalities such as a strong Pockels coefficient and intrinsic \c{hi}(2) nonlinearity. In this paper, we demonstrate the integration of centimetre-long thin-film lithium niobate (TFLN) devices on a SiN platform using the micro-transfer printing (uTP) method. At a wavelength of 1550 nm, propagation losses of approximately 0.9 dB/cm and transition losses of 1.8 dB per facet were measured. Furthermore, the TFLN was integrated into an imbalanced push-pull Mach-Zehnder modulator, achieving a V{\pi} of 3.2 V. The electro-optics nature of the observed modulation is confirmed by measuring the device up to 35 GHz, showing that the printing does not affect the high-speed LN properties.

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Margot Niels, Tom Vanackere, Tom Vandekerckhove, Stijn Poelman, Tom Reep, Günther Roelkens, Maximilien Billet, Bart Kuyken. 2024-12-19. Centimetre-Scale Micro-Transfer Printing to enable Heterogeneous Integration of Thin Film Lithium Niobate with Silicon Photonics. https://arxiv.org/abs/2412.15157

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