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arXiv · 2412.13094

Room-temperature memristive switching between charge density wave states

R. Venturini·M. Rupnik·J. Gašperlin·J. Lipič·P. Šutar·Y. Vaskivskyi·F. Ščepanović·D. Grabnar·D. Golež·D. Mihailovic
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Abstract

Control over charge density wave (CDW) states is technologically promising for the development of ultra-efficient memory devices. However, using electrical pulses for non-volatile resistance switching involving CDW states has so far been limited to cryogenic temperatures. In this work, we investigate a recently discovered layered semiconductor EuTe4, which exhibits the coexistence of distinct CDW orders. We report that electrical pulses can be used for excitation to non-equilibrium, yet stable electronic states across a broad temperature range from 6 K to 400 K. We find that switching occurs through a non-thermal pathway and is reversible via a thermal erase procedure. The resistance of the new electronic state is tunable by the pulse voltage, so the device acts as a memristor. Calculations show fixed bilayer CDW, whereas CDW in single layers shows bistability due to weak Eu-Te links. Low-voltage, fast, and energy-efficient CDW switching holds potential for memristor applications.

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R. Venturini, M. Rupnik, J. Gašperlin, J. Lipič, P. Šutar, Y. Vaskivskyi, F. Ščepanović, D. Grabnar, D. Golež, D. Mihailovic. 2024-12-17. Room-temperature memristive switching between charge density wave states. https://doi.org/10.1038/s41467-026-73267-x

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