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arXiv · 2412.11577

Highly Polarizable Semiconductors and Universal Origin of Ferroelectricity in Materials with a Litharge-Type Structural Unit

Ziye Zhu·Jiaming Hu·Yubo Yuan·Hua Wang·Xiao Lin·Wenbin Li
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Abstract

We discover that a large family of [Pb$_2$F$_2$]- and [Bi$_2$O$_2$]-based mixed-anion materials with a litharge-type structural unit are highly polarizable layered semiconductors on the edge of ferroelectricity. First-principles calculations demonstrate that in this family of materials, compounds as diverse as PbFBr, BiOCl, BiCuOSe, Bi$_2$OS$_2$, and Bi$_5$O$_4$S$_3$Cl exhibit static dielectric constants an order of magnitude higher than typical semiconductors. Additionally, they undergo a ferroelectric transition when subjected to a few percent of tensile strain. The ferroelectric transitions of these materials are found to have a universal origin in the strong cross-bandgap hybridization of the cation $p$ orbitals, enabled by the cation 6s$^2$ lone-pair electrons and the litharge-type structure of the [Pb$_2$F$_2$] and [Bi$_2$O$_2$] layers, as demonstrated by the strain-induced ferroelectric transition in the archetypal litharge $\alpha$-PbO. These results establish materials with a litharge-type structural unit as a large and versatile family of highly polarizable layered semiconductors in proximity to ferroelectricity, offering vast opportunities for multifunctional materials design.

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Ziye Zhu, Jiaming Hu, Yubo Yuan, Hua Wang, Xiao Lin, Wenbin Li. 2024-12-16. Highly Polarizable Semiconductors and Universal Origin of Ferroelectricity in Materials with a Litharge-Type Structural Unit. https://doi.org/10.1021/acs.nanolett.5c00569

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