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arXiv · 2412.10075

Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale

Amadeusz Dydniański·Aleksandra Łopion·Mateusz Raczyński·Tomasz Kazimierczuk·Karolina Ewa Połczyńska·Wojciech Pacuski·Piotr Kossacki
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Abstract

In this work, we study the impact of carrier localization on three quantities sensitive to carrier gas density at the micrometer scale: charged exciton (X+) oscillator strength, local free carrier conductivity, and the Knight shift. The last two are observed in a micrometer-scale, spatially resolved optically detected magnetic resonance experiment (ODMR). On the surface of MBE-grown (Cd,Mn)Te quantum well we identify defected areas in the vicinity of dislocations. We find that these areas show a much lower conductivity signal while maintaining the same Knight shift values as the pristine areas of the quantum well. We attribute this behavior to carrier localization in the defected regions.

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Amadeusz Dydniański, Aleksandra Łopion, Mateusz Raczyński, Tomasz Kazimierczuk, Karolina Ewa Połczyńska, Wojciech Pacuski, Piotr Kossacki. 2024-12-13. Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale. https://doi.org/10.1016/j.ssc.2024.115755

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