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arXiv · 2412.09693

Low two-level-system noise in hydrogenated amorphous silicon

Fabien Defrance·Andrew D. Beyer·Jordan Wheeler·Jack Sayers·Sunil R. Golwala
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Abstract

At sub-Kelvin temperatures, two-level systems (TLS) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) in superconductive lumped-element resonators using parallel-plate capacitors (PPCs). The TLS noise results presented in this article for two recipes of a-Si:H improve on the best achieved in the literature by a factor >5 for a-Si:H and other amorphous dielectrics and are comparable to those observed for resonators deposited on crystalline dielectrics.

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Fabien Defrance, Andrew D. Beyer, Jordan Wheeler, Jack Sayers, Sunil R. Golwala. 2024-12-12. Low two-level-system noise in hydrogenated amorphous silicon. https://arxiv.org/abs/2412.09693

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