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arXiv · 2412.05960

Resistance switch in ferromagnet/spin glass/ferromagnet spin valves

Dezhi Song·Fuyang Huang·Gang Yao·Haimin Zhang·Haiming Huang·Jun Zhang·Xu-Cun Ma·Jin-Feng Jia·Qi-Kun Xue·Ye-Ping Jiang
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Abstract

We obtain in single van-der-Waals layer of MnBi2Te4 the spin-valve-like ferromagnet/spin glass (SG)/ferromagnet architecture, where the switch of individual spin states in the SG-like layer appears as the resistance switch behavior. The characteristic temperature of SG can be effectively tuned by fine-control of Bi-doping in the SG layer. A doping- and temperature-dependent phase diagram is established. We demonstrate the remote manipulation and detection of the states of individual Mn-layer spins by tunneling electrons in favor of the electron-phonon, spin-phonon, spin-transfer torque and spin-flip interactions among hot electrons, lattice and local spins, where the spin valve layer is even buried below two-quintuple-layer Bi2Te3. The integration of the SG state into spin valves opens the opportunity of realizing atomic-scale spintronics by integrating different degrees of freedom in two dimensional materials.

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Dezhi Song, Fuyang Huang, Gang Yao, Haimin Zhang, Haiming Huang, Jun Zhang, Xu-Cun Ma, Jin-Feng Jia, Qi-Kun Xue, Ye-Ping Jiang. 2025-10-31. Resistance switch in ferromagnet/spin glass/ferromagnet spin valves. https://arxiv.org/abs/2412.05960

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