Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer

Krishna Rani Sahoo; Manoj Talluri; Dipak Maity; Suman Mundlia; Ashique Lal; M. S. Devapriya; Arabinda Haldar; Chandrasekhar Murapaka; Tharangattu N. Narayanan

arXiv · 2411.09277

Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer

Krishna Rani Sahoo·Manoj Talluri·Dipak Maity·Suman Mundlia·Ashique Lal·M. S. Devapriya·Arabinda Haldar·Chandrasekhar Murapaka·Tharangattu N. Narayanan

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Abstract

Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VMS) as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ~0.3 S/m of MoS2 to ~100000 S/m upon doping to the level of 9 atomic%. Ferromagnetic resonance (FMR) based spin-pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin-torque FMR measurements demonstrate the suggesting latter's potential as a spin-orbit torque layer in 2D spintronic devices.

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Krishna Rani Sahoo, Manoj Talluri, Dipak Maity, Suman Mundlia, Ashique Lal, M. S. Devapriya, Arabinda Haldar, Chandrasekhar Murapaka, Tharangattu N. Narayanan. 2024-11-14. Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer. https://arxiv.org/abs/2411.09277

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