arXiv · 2411.02676
One-step synthesis of graphene containing topological defects
Abstract
Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.
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Benedikt P. Klein, Matthew A. Stoodley, Joel Deyerling, Luke A. Rochford, Dylan B. Morgan, David Hopkinson, Sam Sullivan-Allsop, Fulden Eratam, Lars Sattler, Sebastian M. Weber, Gerhard Hilt, Alexander Generalov, Alexei Preobrajenski, Thomas Liddy, Leon B. S. Williams, Tien-Lin Lee, Alex Saywell, Roman Gorbachev, Sarah J. Haigh, Christopher Allen, Willi Auwärter, Reinhard J. Maurer, David A. Duncan. 2024-11-04. One-step synthesis of graphene containing topological defects. https://arxiv.org/abs/2411.02676
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