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arXiv · 2410.18258

Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS$_4$

Pengyuan Shi·Xiaoyu Wang·Lihao Zhang·Wenqin Song·Kunlin Yang·Shuxi Wang·Ruisheng Zhang·Liangliang Zhang·Takashi Taniguchi·Kenji Watanabe·Sen Yang·Lei Zhang·Lei Wang·Wu Shi·Jie Pan·Zhe Wang
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Abstract

Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscillations in an insulating system, the vertical junctions of CrPS$_4$ which is a two dimensional (2D) A-type antiferromagnetic semiconductor. Systematic investigations of MR peaks under varying conditions, including electrode materials, magnetic field direction, temperature, voltage bias and layer number, elucidate a correlation between MR oscillations and spin-canted states in CrPS$_4$. Experimental data and analysis point out the important role of the in-gap electronic states in generating MR oscillations, and we proposed that spin selected interlayer hopping of localized defect states may be responsible for it. Our findings not only illuminate the unusual electronic transport in CrPS$_4$ but also underscore the potential of van der Waals magnets for exploring interesting phenomena.

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Pengyuan Shi, Xiaoyu Wang, Lihao Zhang, Wenqin Song, Kunlin Yang, Shuxi Wang, Ruisheng Zhang, Liangliang Zhang, Takashi Taniguchi, Kenji Watanabe, Sen Yang, Lei Zhang, Lei Wang, Wu Shi, Jie Pan, Zhe Wang. 2024-10-23. Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS$_4$. https://doi.org/10.1103/physrevx.14.041065

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